Datasheet > IPI11N03LA

IPI11N03LA

更新时间： 2024-01-23 08:34:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	308K
描述
OptiMOS㈢2 Power-Transistor

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数据手册

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IPI11N03LA 数据手册

IPI11N03LA

Product Summary

IPP11N03LA

OptiMOS^®2 Power-Transistor

Features

V _DS

11.5

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC¹⁾for target application

R _DS(on),max

I _D

mΩ

• N-channel

• Logic level

• Excellent gate charge x R _DS(on)product (FOM)

PG-TO262-3-1

PG-TO220-3-1

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type

Package

Marking

11N03LA

IPI11N03LA

IPP11N03LA

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

210

E _AS

I _D=30 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=30 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

Rev. 1.4

page 1

2006-05-11

12 3 4 5 6 7...10

中文翻译

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