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IPI100N08S2-07 PDF预览

IPI100N08S2-07

更新时间: 2024-11-05 03:12:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 159K
描述
OptiMOS㈢ Power-Transistor

IPI100N08S2-07 数据手册

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IPB100N08S2-07  
IPP100N08S2-07, IPI100N08S2-07  
OptiMOS® Power-Transistor  
Product Summary  
VDS  
Features  
75  
6.8  
100  
V
• N-channel - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (lead free)  
• Ultra low Rds(on)  
I D  
PG-TO263-3-2  
PG-TO220-3-1  
PG-TO262-3-1  
• 100% Avalanche tested  
Type  
Package  
Ordering Code Marking  
IPB100N08S2-07  
IPP100N08S2-07  
IPI100N08S2-07  
PG-TO263-3-2  
PG-TO220-3-1  
PG-TO262-3-1  
SP0002-19044  
SP0002-19005  
SP0002-19041  
PN0807  
PN0807  
PN0807  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
100  
94  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
Gate source voltage4)  
I D,pulse  
EAS  
T C=25 °C  
I D= 80 A  
400  
810  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2006-03-03  

IPI100N08S2-07 替代型号

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