型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI041N12N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI041N12N3GAKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, | |
IPI045N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM | |
IPI045N10N3G | INFINEON |
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OptiMOS?3 Power-Transistor | |
IPI04CN10NG | INFINEON |
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OptiMOS™2 Power-Transistor | |
IPI04CN10NGXKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, | |
IPI04N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPI04N03LA_07 | INFINEON |
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OptiMOS®2 Power-Transistor | |
IPI051N15N5 | INFINEON |
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英飞凌推出的 OptiMOS?5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等 | |
IPI052NE7N3G | INFINEON |
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OptiMOS3 Power-Transistor |