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IPI041N12N3 G PDF预览

IPI041N12N3 G

更新时间: 2024-11-06 11:14:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
11页 873K
描述
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能,适用于各种应用,支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性,帮助实现优化解决方案。

IPI041N12N3 G 数据手册

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IPI041N12N3 G  
IPB038N12N3 G  
IPP041N12N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
VDS  
120  
3.8  
V
• N-channel, normal level  
RDS(on),max (TO-263)  
ID  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
120  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant, halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB038N12N3 G  
IPI041N12N3 G  
IPP041N12N3 G  
Package  
Marking  
PG-TO263-3  
038N12N  
PG-TO262-3  
041N12N  
PG-TO220-3  
041N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
120  
120  
A
T C=100 °C  
Pulsed drain current3)  
I D,pulse  
E AS  
T C=25 °C  
480  
I D=100 A, R GS=25 W  
Avalanche energy, single pulse  
900  
mJ  
V
Gate source voltage 4)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 2.3  
page 1  
2014-04-15  

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