IPDD60R190G7
MOSFET
PG-HDSOP-10-1
600VꢀCoolMOS™ꢀG7ꢀSJꢀPowerꢀDevice
TheꢀC7ꢀGOLDꢀseriesꢀ(G7)ꢀforꢀtheꢀfirstꢀtimeꢀbringsꢀtogetherꢀtheꢀbenefitsꢀof
theꢀC7ꢀGOLDꢀCoolMOS™ꢀtechnology,ꢀ4ꢀpinꢀKelvinꢀSourceꢀcapabilityꢀand
theꢀimprovedꢀthermalꢀpropertiesꢀofꢀtheꢀDDPAKꢀpackageꢀtoꢀenableꢀa
possibleꢀꢀSMDꢀsolutionꢀforꢀhighꢀcurrentꢀtopologiesꢀsuchꢀasꢀPFCꢀupꢀtoꢀ3kW.
10
6
tab
Pin 1
5
Features
•ꢀC7ꢀGoldꢀgivesꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg.
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)
•ꢀC7ꢀGoldꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀRDS(on)ꢀinꢀsmallestꢀfootprint.
•ꢀDDPAKꢀpackageꢀhasꢀinbuiltꢀ4thꢀpinꢀKelvinꢀSourceꢀconfigurationꢀandꢀlow
parasiticꢀsourceꢀinductanceꢀ(~3nH).
•ꢀDDPAKꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-freeꢀandꢀhasꢀeasyꢀvisual
inspectionꢀleads.
Drain
Pin 6-10, Tab
•ꢀDDPAKꢀSMDꢀpackageꢀcombinedꢀwithꢀleadꢀfreeꢀdieꢀattachꢀprocess
enablesꢀimprovedꢀthermalꢀperformanceꢀ(Rth).
*1
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4,5
Benefits
•ꢀC7ꢀGoldꢀFOMꢀRDS(on)*Qgꢀꢀisꢀ15%ꢀbetterꢀthanꢀpreviousꢀC7ꢀ600Vꢀenabling
fasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency.
*1: Internal body diode
•ꢀPossibilityꢀtoꢀincreasseꢀeconomiesꢀofꢀscalesꢀbyꢀusageꢀinꢀPFCꢀandꢀPWM
topologiesꢀinꢀtheꢀapplication.
•ꢀC7ꢀGoldꢀcanꢀreachꢀ50mΩꢀinꢀDDPAKꢀ115mm2ꢀfootprint,ꢀwhereasꢀprevious
BICꢀC7ꢀ600Vꢀwasꢀ40mΩꢀinꢀ150mm2ꢀD2PAKꢀfootprint.
•ꢀReducingꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimproves
efficiencyꢀbyꢀfasterꢀswitchingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.
•ꢀDDPAKꢀpackageꢀisꢀeasyꢀtoꢀuseꢀandꢀhasꢀtheꢀhighestꢀqualityꢀstandards.
•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀDDPAKꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigher
currentꢀdesignsꢀthanꢀhasꢀbeenꢀpreviouslyꢀpossible.
Potentialꢀapplications
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS@Tj,max
RDS(on),max
Qg,typ
Value
650
190
18
Unit
V
mΩ
nC
A
ID,pulse
36
ID,continuous @ Tj<150°C 19
A
Eoss@400V
2.17
680
µJ
Body diode di/dt
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPDD60R190G7
PG-HDSOP-10
60R190G7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-10-27
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