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IPD95R450PFD7 PDF预览

IPD95R450PFD7

更新时间: 2023-09-03 20:32:45
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
14页 992K
描述
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPD95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPD95R450PFD7 comes in a TO-252 DPAK package and features and an on-state resistance (RDS(on)) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.

IPD95R450PFD7 数据手册

 浏览型号IPD95R450PFD7的Datasheet PDF文件第2页浏览型号IPD95R450PFD7的Datasheet PDF文件第3页浏览型号IPD95R450PFD7的Datasheet PDF文件第4页浏览型号IPD95R450PFD7的Datasheet PDF文件第5页浏览型号IPD95R450PFD7的Datasheet PDF文件第6页浏览型号IPD95R450PFD7的Datasheet PDF文件第7页 
IPD95R450PFD7  
MOSFET  
DPAK  
950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
Theꢀlatestꢀ950VꢀCoolMOS™ꢀPFD7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀthe  
superꢀjunctionꢀ(SJ)ꢀtechnologies.ꢀThisꢀtechnologyꢀisꢀdesignedꢀtoꢀaddress  
LightingꢀandꢀIndustrialꢀSMPSꢀapplicationsꢀbyꢀcombiningꢀbest-in-class  
performanceꢀwithꢀstate-of-the-artꢀeaseꢀofꢀuse.ꢀComparedꢀtoꢀthe  
CoolMOS™ꢀP7ꢀfamilies,ꢀtheꢀPFD7ꢀoffersꢀanꢀintegratedꢀultra-fastꢀbody  
diodeꢀenablingꢀusageꢀinꢀresonantꢀtopologiesꢀwithꢀmarketsꢀlowestꢀreverse  
recoveryꢀchargeꢀ(Qrr).  
tab  
2
1
3
Features  
•ꢀIntegratedꢀultra-fastꢀbodyꢀdiode  
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀQrr  
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss,ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss  
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V  
•ꢀIntegratedꢀfastꢀbodyꢀdiode  
Drain  
Pin 2, Tab  
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability  
•ꢀFullyꢀoptimizedꢀportfolio  
*1  
Gate  
Pin 1  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀTHDꢀandꢀSMDꢀpackages  
•ꢀESDꢀprotectionꢀmin.ꢀClassꢀ2ꢀ(HBM)  
Source  
Pin 3  
*1: Internal body diode  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀrobustnessꢀenablingꢀusageꢀinꢀresonant  
topologies  
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies  
•ꢀImprovedꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  
Potentialꢀapplications  
•ꢀSuitableꢀforꢀhardꢀ&ꢀsoftꢀswitchingꢀtopologies  
•ꢀOptimizedꢀforꢀusageꢀinꢀLLCꢀandꢀZVSꢀtopologies  
•ꢀPFCꢀ&ꢀLLCꢀapplicationsꢀinꢀLightingꢀandꢀIndustrialꢀSMPS  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj = 25 °C  
RDS(on),max  
Value  
950  
450  
43  
Unit  
V
m  
nC  
A
Qg,typ  
ID  
13.3  
3.0  
Eoss @ 500V  
Body diode diF/dt  
Qoss @ 500V  
µJ  
1300  
0.1  
A/µs  
µC  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPD95R450PFD7  
PG-TO252-3  
95R450D7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-04-22  

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