Datasheet > IPD70N10S312ATMA1

IPD70N10S312ATMA1

更新时间： 2024-09-28 06:05:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	175K
描述
Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

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IPD70N10S3-12

OptiMOS^®-T Power-Transistor

Product Summary

V _DS

100

11.1

R _DS(on),max

I _D

Features

• N-channel - Enhancement mode

PG-TO252-3-11

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPD70N10S3-12

PG-TO252-3-11 QN1012

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V _GS=10V

Continuous drain current

T _C=100°C, V _GS=10V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E _AS

T _C=25°C

I _D=35A

280

410

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _AS

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2011-10-06

12 3 4 5 6 7...9

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IPD70N10S312ATMA1 替代型号

型号	品牌	替代类型	描述	数据表
IPB70N10S3-12	INFINEON	完全替代	OptiMOS-T Power-Transistor
IPD70N10S3-12	INFINEON	类似代替	OptiMOS-T Power-Transistor
BSC109N10NS3G	INFINEON	功能相似	OptiMOSTM3 Power-Transistor

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