Datasheet > IPD65R660CFDA

IPD65R660CFDA

更新时间： 2024-09-28 14:54:27

品牌	Logo	应用领域
英飞凌 - INFINEON		高压二极管
页数	文件大小	规格书
13页	1100K
描述
650V CoolMOS? CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS? 功率 MOSFET。650V CoolMOS? CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。

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中文翻译

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数据手册

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IPD65R660CFDA 数据手册

IPD65R660CFDA

MOSFET

DPAK

650VꢀCoolMOSªꢀCFDAꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀ650VꢀCoolMOS™ꢀCFDAꢀseries

combinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhigh

classꢀinnovation.ꢀTheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfast

switchingꢀSJꢀMOSFETꢀwhileꢀofferingꢀanꢀextremelyꢀfastꢀandꢀrobustꢀbody

diode.ꢀThisꢀcombinationꢀofꢀextremelyꢀlowꢀswitching,ꢀcommutationꢀand

conductionꢀlossesꢀtogetherꢀwithꢀhighestꢀrobustnessꢀmakeꢀespecially

resonantꢀswitchingꢀapplicationsꢀmoreꢀreliable,ꢀmoreꢀefficient,ꢀlighter,ꢀand

cooler.

tab

Features

•ꢀUltra-fastꢀbodyꢀdiode

Drain

Pin 2

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀEasyꢀtoꢀuse/drive

Gate

Pin 1

•ꢀQualifiedꢀaccordingꢀtoꢀAECꢀQ101

•ꢀGreenꢀpackageꢀ(RoHSꢀcompliant),ꢀPb-freeꢀplating,ꢀhalogenꢀfreeꢀforꢀmold

compound

Source

Pin 3

Applications

650VꢀCoolMOS™ꢀCFDAꢀisꢀdesignedꢀforꢀswitchingꢀapplications.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

650

0.66

Unit

V_DS

RDS(on),max

Qg,typ

Ω

ID,pulse

Eoss @ 400V

Body diode di/dt

Qrr

1.8

µJ

A/µs

µC

900

0.2

trr

Irrm

4.5

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD65R660CFDA

PG-TO 252

65F660A

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2016-04-18

12 3 4 5 6 7...13

中文翻译

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