是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 7.78 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2.4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 22 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD50R380CE | INFINEON |
获取价格 |
500V CoolMOS⢠CE Power MOSFET | |
IPD50R380CEAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPD50R399CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPD50R399CPBT | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IPD50R399CPBTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Met | |
IPD50R399CPXT | INFINEON |
获取价格 |
暂无描述 | |
IPD50R3K0CE | INFINEON |
获取价格 |
500V CoolMOS⢠CE Power MOSFET | |
IPD50R3K0CEAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi | |
IPD50R500CE | INFINEON |
获取价格 |
500V CoolMOS⢠CE Power MOSFET | |
IPD50R500CEAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |