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IPD50R2K0CEBTMA1 PDF预览

IPD50R2K0CEBTMA1

更新时间: 2024-10-30 21:16:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 1572K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IPD50R2K0CEBTMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.78配置:Single
最大漏极电流 (Abs) (ID):2.4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):22 W
子类别:FET General Purpose Power表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IPD50R2K0CEBTMA1 数据手册

 浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第2页浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第3页浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第4页浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第5页浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第6页浏览型号IPD50R2K0CEBTMA1的Datasheet PDF文件第7页 
IPD50R2K0CE,ꢀIPU50R2K0CE  
MOSFET  
DPAK  
IPAK  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
tab  
tab  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa  
2
1
1
2
3
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive  
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest  
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand  
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.  
Drain  
Pin 2  
Gate  
Pin 1  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀuse/drive  
Source  
Pin 3  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Applications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
ID  
Value  
550  
2
Unit  
V
3.6  
6
A
Qg.typ  
nC  
A
ID,pulse  
6.1  
0.62  
Eoss@400V  
µJ  
Typeꢀ/ꢀOrderingꢀCode  
IPD50R2K0CE  
Package  
Marking  
RelatedꢀLinks  
PG-TO 252  
PG-TO 251  
50S2K0CE  
see Appendix A  
IPU50R2K0CE  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2016-06-13  

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