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IPD50R280CEAUMA1 PDF预览

IPD50R280CEAUMA1

更新时间: 2024-10-30 19:53:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
13页 1184K
描述
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

IPD50R280CEAUMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:not_compliantFactory Lead Time:18 weeks
风险等级:1.68雪崩能效等级(Eas):231 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):42.9 A
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPD50R280CEAUMA1 数据手册

 浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第2页浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第3页浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第4页浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第5页浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第6页浏览型号IPD50R280CEAUMA1的Datasheet PDF文件第7页 
IPD50R280CE  
MOSFET  
DPAK  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa  
tab  
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive  
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest  
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand  
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.  
2
1
3
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀuse/drive  
Drain  
Pin 2  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Gate  
Pin 1  
Applications  
Source  
Pin 3  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
ID  
Value  
Unit  
550  
V
0.28  
18.1  
32.6  
42.9  
3.2  
A
Qg,typ  
nC  
A
ID,pulse  
Eoss @ 400V  
µJ  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPD50R280CE  
PG-TO 252  
50S280CE  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2016-06-13  

IPD50R280CEAUMA1 替代型号

型号 品牌 替代类型 描述 数据表
IPD50R280CEATMA1 INFINEON

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Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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