Datasheet > IPD50R1K4CE

IPD50R1K4CE

更新时间： 2024-10-30 11:59:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	1164K
描述
500V CoolMOSâ¢ CE Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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IPD50R1K4CE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.73	JESD-609代码：	e3
湿度敏感等级：	3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IPD50R1K4CE 数据手册

Product Brief

Features

Reduced energy stored in output

capacitance (E_oss

)

500V CoolMOS™ CE Power MOSFET

High body diode ruggedness

Reduced reverse recovery charge (Q_rr)

Reduced gate charge (Q_g)

The CoolMOS™ CE is a new technology platform of Inﬁneon’s market leading

high voltage power MOSFETs designed according to the revolutionary

superjunction (SJ) principle.

Beneﬁts

Easy control of switching behavior

Improved light load eﬃciency

500V CE portfolio provides all beneﬁts of a fast switching SJ MOSFET while not

sacriﬁcing ease of use. As the complete CE series, devices achieve extremely

low conduction and switching losses and can make switching applications

more eﬃcient, more compact, lighter and cooler.

compared to previous CoolMOS™

generations

Cost attractive alternative compared

to standard MOSFETs

Outstanding reliability with proven

CoolMOS™ quality combined with

high body diode ruggedness

Efficiency comparison 500V CoolMOS™ CE vs competitor standard MOSFET

CCM PFC stage, 90VAC up to 400W

Applications

IPP50R280CE vs. Standard MOS

eﬃciency @ VIN=90VAC; plug&play scenario;

R_g,ext=5Ω ; f=100kHz; V_OUT=400VDC

IPP50R280CE vs. Standard MOS

delta eﬃciency @ V_IN=90VAC; plug&play scenario;

R_g,ext=5Ω ; f=100kHz; V_OUT=400VDC

Consumer

Lighting

0,6

0,4

PC Silverbox

IPP50R280CE

Standard MOS

IPP50R280CE

Standard MOS

0,2

0,0

50 100 150 200 250 300 350 400

-0,2

-0,4

-0,6

-0,8

-1,0

40% Q_greduction

P_OUT[W]

www.inﬁneon.com/ce

中文翻译

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