Datasheet > IPD50P04P4L11

IPD50P04P4L11

更新时间： 2024-10-15 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	463K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-50A;Vgs(th)(V):±16;漏源导通电阻:10.6mΩ@-10V

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IPD50P04P4L11 数据手册

50P04P4L

-40V P-Channel MOSFET

UMW

Features

• AEC qualified

• 175°C operating temperature

• Intended for reverse battery protection

•

V_DS(V) = -40V

I_D=- 50A (V_GS= -10V)

R_DS(ON)<10.6mΩ (V _GS= -10V)

R_DS(ON)< 17.2mΩ (V _GS=- 4.5V)

•

Maximum ratings,at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V_GS=-10V¹⁾

I _D

Continuous drain current

-50

T _C=100°C,

V_GS=-10V²⁾

-40

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

I _D= -25A

-200

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

I _AS

-50

±16³⁾

V_GS

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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