Datasheet > IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2

更新时间： 2024-10-30 19:53:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	159K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IPD50P03P4L11ATMA2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	12 weeks
风险等级：	1.52	Base Number Matches：	1

IPD50P03P4L11ATMA2 数据手册

浏览型号IPD50P03P4L11ATMA2的Datasheet PDF文件第2页

浏览型号IPD50P03P4L11ATMA2的Datasheet PDF文件第3页

浏览型号IPD50P03P4L11ATMA2的Datasheet PDF文件第4页

浏览型号IPD50P03P4L11ATMA2的Datasheet PDF文件第5页

浏览型号IPD50P03P4L11ATMA2的Datasheet PDF文件第6页

IPD50P03P4L-11

OptiMOS^®-P2 Power-Transistor

Product Summary

V_DS

-30

10.5

-50

R _DS(on),max

I _D

mΩ

Features

PG-TO252-3-11

• P-channel - Logic Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Intended for reverse battery protection

Type

Package

Marking

IPD50P03P4L-11

PG-TO252-3-11 4P03L11

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

_GS=-10V¹⁾

I _D

Continuous drain current

-50

T _C=100°C,

_GS=-10V²⁾

-42

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

-200

100

I _D= -25A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-50

V_GS

P_tot

+5/-16

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2009-07-29

12 3 4 5 6 7...9

中文翻译

下载PDF

与IPD50P03P4L11ATMA2相关器件

型号	品牌	获取价格	描述	数据表
IPD50P04P4-13	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPD50P04P413ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide
IPD50P04P4L11	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C
IPD50P04P4L-11	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPD50P04P4L11ATMA2	INFINEON	获取价格	Power Field-Effect Transistor,
IPD50R1K4CE	INFINEON	获取价格	500V CoolMOSâ¢ CE Power MOSFET
IPD50R1K4CEAUMA1	INFINEON	获取价格	Power Field-Effect Transistor,
IPD50R280CE	INFINEON	获取价格	500V CoolMOSâ¢ CE Power MOSFET
IPD50R280CEATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPD50R280CEAUMA1	INFINEON	获取价格	Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S