Datasheet > IPD50P03P4L-11

IPD50P03P4L-11

更新时间： 2024-05-23 22:21:56

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	510K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-50A;Vgs(th)(V):±20;漏源导通电阻:10.5mΩ@-10V

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IPD50P03P4L-11 数据手册

50P03P4L

-30V P-Channel MOSFET

UMW

Features

• P-channel - Logic Level - Enhancement mode

• AEC qualified

• 175°C operating temperature

• Green Product (RoHS compliant)

• Intended for reverse battery protection

•

V_DS(V) =-30V

•

I_D=-50A (V_GS= 10V)

•

R_DS(ON)<10.5mΩ (V _GS=-10V)

R_DS(ON)<18mΩ (V _GS=-4.5V)

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

I _D

Continuous drain current

-50

V_GS=-10V¹⁾

T _C=100°C,

V_GS=-10V²⁾

-42

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

I _D= -25A

-200

100

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

I _AS

-50

V_GS

+5/-16

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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