型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD50P03P4L11ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Me |
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IPD50P03P4L11ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IPD50P04P4-13 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor |
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IPD50P04P413ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide |
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IPD50P04P4L11 | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-40V;持续漏极电流(Id)(在25°C |
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IPD50P04P4L-11 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor |
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IPD50P04P4L11ATMA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IPD50R1K4CE | INFINEON |
获取价格 |
500V CoolMOS⢠CE Power MOSFET |
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IPD50R1K4CEAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IPD50R280CE | INFINEON |
获取价格 |
500V CoolMOS⢠CE Power MOSFET |
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