IPD50N06S4L-12

更新时间： 2024-10-02 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	164K
描述
OptiMOS-T2 Power-Transistor

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中文翻译

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数据手册
替代型号

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IPD50N06S4L-12 数据手册

IPD50N06S4L-12

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

R _DS(on),max

I _D

mΩ

Features

• N-channel - Enhancement mode

PG-TO252-3-11

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPD50N06S4L-12

PG-TO252-3-11 4N06L12

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V_GS=10V

Continuous drain current

T _C=100°C, V_GS=10V²⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

200

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=25A

V_GS

P_tot

±16

T _C=25°C

Power dissipation

°C

−

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2009-03-23

12 3 4 5 6 7...9

中文翻译

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IPD50N06S4L-12 替代型号

型号	品牌	替代类型	描述	数据表
IPD90N06S4L-06	INFINEON	类似代替	OptiMOS-T2 Power-Transistor
IPD30N06S4L-23	INFINEON	类似代替	OptiMOS-T2 Power-Transistor
IPD50N06S4L-08	INFINEON	类似代替	OptiMOS-T2 Power-Transistor

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