Datasheet > IPD082N10N3 G

IPD082N10N3 G

更新时间： 2024-10-31 11:11:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	778K
描述
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPD082N10N3 G 数据手册

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V_DS

100

8.2

• N-channel, normal level

R_{DS(on),max (TO 252)}

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G

IPD082N10N3 G

Package

Marking

PG-TO220-3

086N10N

PG-TO262-3

086N10N

PG-TO263-3

083N10N

PG-TO252-3

082N10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

320

I _D=73 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

110

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.6

page 1

2013-07-09

12 3 4 5 6 7...12

中文翻译

下载PDF

与IPD082N10N3 G相关器件

型号	品牌	获取价格	描述	数据表
IPD082N10N3G	INFINEON	获取价格	OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD082N10N3G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
IPD082N10N3GATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, M
IPD082N10N3GBTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, M
IPD082N10N3GXT	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, M
IPD088N04LG	INFINEON	获取价格	OptiMOS3 Power-Transistor
IPD088N06N3 G	INFINEON	获取价格	OptiMOS ? 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器
IPD088N06N3 G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IPD088N06N3G	INFINEON	获取价格	OptiMOS(TM)3 Power-Transistor
IPD088N06N3GBTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Me