型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD050N03LGXT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me |
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IPD050N10N5 | INFINEON |
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英飞凌的OptiMOS?5 100V功率MOSFET IPD050N10N5专为通信模块中 |
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IPD050N10N5ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Me |
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IPD052N10NF2S | INFINEON |
获取价格 |
Infineon's StrongIRFET? 2??power MOSFET?100 V features low RDS(on)?of 5.2 mOhm, addressing |
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IPD053N06N | INFINEON |
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New OptiMOS⢠40V and 60V |
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IPD053N06N3G | INFINEON |
获取价格 |
OptiMOS(TM)3 Power-Transistor |
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IPD053N06N3GBTMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me |
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IPD053N06NATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me |
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IPD053N08N3 G | INFINEON |
获取价格 |
OptiMOS™ 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源 |
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IPD053N08N3G | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor |
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