Datasheet > IPC70N04S5-4R6

IPC70N04S5-4R6

更新时间： 2024-09-17 19:35:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	454K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IPC70N04S5-4R6 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.69
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPC70N04S5-4R6 数据手册

IPC70N04S5-4R6

OptiMOS^™-5 Power-Transistor

Product Summary

V_DS

4.6

R_DS(on),max

I_D

Features

PG-TDSON-8-34

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPC70N04S5-4R6

PG-TDSON-8-34 5N044R6

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100°C, V_GS=10V¹⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

280

Avalanche energy, single pulse²⁾

Avalanche current, single pulse⁴⁾

Gate source voltage

I _D=35A

I _AS

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2016-12-09

12 3 4 5 6 7...9

中文翻译

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