Datasheet > IPC60N04S4-06_15

IPC60N04S4-06_15

更新时间： 2024-09-17 01:18:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	202K
描述
N-channel - Enhancement mode

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中文翻译

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数据手册

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IPC60N04S4-06_15 数据手册

IPC60N04S4-06

OptiMOS^TM-T2 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

6.0

m

Features

• N-channel - Enhancement mode

PG-TDSON-8-23

• AEC qualified

• MSL1 up to 260°C peak reflow

• Green product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

4N0406

IPC60N04S4-06

PG-TDSON-8-23

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

T _J=175°C,

_GS=10V

60¹⁾

I _D

Continuous drain current

T _C=100 °C,

T _J=175°C,

58^{1, 2)}

_GS=10 V

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

240

120

I _D=30 A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

V_GS

+/-20

T _C=25 °C,

T _J=175°C

P_tot

Power dissipation

-55 ... +175³⁾

T _j, T _stg

Operating and storage temperature

°C

Rev. 1.0

page 1

2015-05-22

12 3 4 5 6 7...9

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