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IPC50N04S5-5R8 PDF预览

IPC50N04S5-5R8

更新时间: 2024-11-07 11:15:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 420K
描述
车规级MOSFET

IPC50N04S5-5R8 数据手册

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IPC50N04S5-5R8  
OptiMOS-5 Power-Transistor  
Product Summary  
VDS  
40  
5.8  
50  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8-33  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Normal Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IPC50N04S5-5R8  
PG-TDSON-8-33 5N045R8  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100°C, VGS=10V2)  
50  
A
44  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
200  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=25A  
30  
50  
mJ  
A
I AS  
-
VGS  
-
±20  
V
Ptot  
T C=25°C  
Power dissipation  
42  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.2  
page 1  
2016-12-06  

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