Datasheet > IPC331N15NM5R

IPC331N15NM5R

更新时间： 2024-09-16 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	272K
描述
英飞凌的 OptiMOS? 5 功率 MOSFET 150V技术突破性地降低了 RDS(on) (与采用 SuperSO8 的竞品相比高达 25%)和 Qrr，在优化系统效率的同时有效减少了设计工作量。此外，超低反向恢复电荷（SuperSO8 中最低的 Qrr = 26nC）提高了换向坚固性。

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IPC331N15NM5R 数据手册

IPC331N15NM5R

OptiMOS™ 5 Power MOS Transistor Chip

IPC331N15NM5R

Type

V_(BR)DSS

R_DS(on)

Die size

Die-thickness

IPC331N15NM5R

150 V

2.9 m

7.05 x 4.7 mm²

246 µm

Description



N-channel enhancement mode

For dynamic characterization refer to the datasheet of IPP051N15N5¹⁾

Electrostatic Discharge Sensitive Device according to JEDEC

Die bond: suitable for soft solder

Wire bond: Al wedge recommended

Backside metallization: NiAg system

Frontside metallization: AlCu system

Passivation: imide

Electrical Characteristics on Wafer Level

at T_j= 25 C, unless otherwise specified.

Parameter

Symbol Value

min. typ.

Unit Conditions

max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

I_DSS

150

V_GS= 0 V

I_D= 1 mA

3.0

3.8

0.1

4.6

V_DS= V_GS

I_D= 290 µA

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-resistance

V_GS= 0 V

V_DS= 120 V

A

I_GSS

100 nA V_GS= 20 V

V_DS= 0 V

100³⁾

R_DS(on)

2.9²⁾

V_GS= 10 V

I_D= 2 A

m

Gate resistance

R_G

5.5

22.5

0.9



Reverse diode forward on-voltage

V_SD

0.65

V_GS= 0 V

I_F= 1 A

Avalanche energy, single pulse

E_AS

70⁴⁾

mJ I_D= 38 A, R_GS= 25 Ω

¹⁾IPP051N15N5 dynamic characterization does not include the internal added R_G

²⁾typical bare die R_DS(on); V_GS= 10 V

³⁾limited by wafer test-equipment

⁴⁾Wafer tested.

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Rev. 2.0

2019-04-09

12 3

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