Datasheet > IPC313N10N3R

IPC313N10N3R

更新时间： 2024-09-21 11:14:35

品牌	Logo	应用领域
英飞凌 - INFINEON		开关放大器电机音频放大器转换器
页数	文件大小	规格书
3页	951K
描述
英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。

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IPC313N10N3R 数据手册

IPC313N10N3R

OptiMOS^TM3 Power MOS Transistor Chip

Type

V_(BR)DSS

R_DS(on)

Die size

Thickness

IPC313N10N3R

100 V

2.7 mΩ¹⁾

6 * 5.2 mm²

220 µm

DESCRIPTION

•

N-channel enhancement mode

For dynamic characterization refer to the datasheet of IPB027N10N3 G²⁾

AQL 0.65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to JEDEC

Die bond: soldered or glued

Backside metallization: NiV system

Frontside metallization: AlCu system

Passivation: nitride (only on edge structure)

Electrical Characteristics on Wafer Level

at T_j= 25 °C, unless otherwise specified.

Parameter

Symbol Value

min. typ.

Unit Conditions

max.

Drain-source breakdown voltage V_(BR)DSS100

V_GS= 0V

I_D= 1 mA

Gate threshold voltage

V_GS(th)

2.7

0.1

3.5

V_DS= V_GS

I_D= 275 µA

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-resistance

I_DSS

µA V_GS= 0V

V_DS= 100 V

I_GSS

100 nA V_GS= 20 V

V_DS= 0 V

R_DS(on)

1.9 ³⁾100 ⁴⁾mΩ V_GS= 10 V

I_D= 2.0 A

Reverse diode forward on-voltage V_SD

1.0

1.2

V_GS=0 V

I_F= 1 A

Internal gate resistance

R_G

45 ⁵⁾

Avalanche energy, single pulse

E_AS

mJ I_D= 30 A, R_GS=25Ω

Infineon Technologies, Rev. 2.0

18.06.2013

12 3

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