Datasheet > IPC302N25N3

IPC302N25N3

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		以太网转换器
页数	文件大小	规格书
3页	108K
描述
英飞凌凭借? OptiMOS? 200V 和 250V 产品，不断提供具有独特性能的同类中较为出色的导通电阻 (R?DS(on)) 功率 MOSFET。领先的导通电阻 R?DS(on) 和品质因数 (FOM) 特征可降低功耗，提高整体效率并提高功率密度。200V 和 250V 产品系列针对 110V AC 网络照明、HID 灯、直流-直流转换器和有源以太网 (PoE) 等应用进行了优化。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPC302N25N3 数据手册

IPC302N25N3

OptiMOS^TM3 Power MOS Transistor Chip

Type

V_(BR)DSS

R_DS(on)

Die size

Thickness

IPC302N25N3

250 V

20 m¹⁾

6.7 * 4.5 mm²

250 m

DESCRIPTION



N-channel enhancement mode

For additional characteristic and max rating refer to the datasheet of IPP200N25N3 G

AQL 0.65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883C

Die bond: soldered or glued

Backside metallization: NiV system

Frontside metallization: AlCu system

Passivation: nitride (only on edge structure)

Package: sawn on foil

Electrical Characteristics on Wafer Level

at T_j= 25 C, unless otherwise specified.

Parameter

Symbol Value

min. typ.

Unit Conditions

max.

Drain-source breakdown voltage V_(BR)DSS250

V_GS= 0V

I_D= 1 mA

Gate threshold voltage

V_GS(th)

V_DS= V_GS

I_D= 270 A

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-resistance

I_DSS

0.1

A V_GS= 0V

V_DS= 200 V

I_GSS

100 nA V_GS= 20 V

V_DS= 0 V

R_DS(on)

16 ³⁾100 ²⁾m V_GS= 10 V

I_D= 2 A

Reverse diode forward on-voltage V_SD

0.7

1.2

V_GS=0 V

I_F= 1 A

Avalanche energy, single pulse

E_AS

40 ⁴⁾

mJ I_D= 30 A, R_GS=25Ω

¹⁾packaged in a PG-TO220-3 (see ref. product)

²⁾limited by wafer test-equipment

³⁾typical bare die R_DS(on); V_GS=10V

⁴⁾Wafer tested. For general avalanche capability refer to the datasheet of IPP200N25N3 G

Infineon Technologies, Rev. 2.0 27.04.2010

12 3

中文翻译

下载PDF

与IPC302N25N3相关器件

型号	品牌	获取价格	描述	数据表
IPC302NE7N3	INFINEON	获取价格	英飞凌 OptiMOS? 75V 功率 MOSFET 系列产品针对台式机和服务器等 AC-
IPC313N10N3R	INFINEON	获取价格	英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (o
IPC331N15NM5R	INFINEON	获取价格	英飞凌的 OptiMOS? 5 功率 MOSFET 150V技术突破性地降低了 RDS(o
IPC35HC/2-STF-15,00	PHOENIX	获取价格	Barrier Strip Terminal Block
IPC3SAD	ETC	获取价格	Pushbutton switches for harsh environments -
IPC50N04S5-5R8	INFINEON	获取价格	车规级MOSFET
IPC50N04S5L-5R5	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Me
IPC50N04S5L5R5ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Me
IPC-510	ADVANTECH	获取价格	4U Rackmount Chassis with Front USB and PS/2 Interfaces
IPC-510_12	ADVANTECH	获取价格	Economical 4U Rackmount Chassis with Front USB and PS/2 Interfaces