Datasheet > IPC302N25N3

IPC302N25N3

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		以太网转换器
页数	文件大小	规格书
3页	108K
描述
英飞凌凭借? OptiMOS? 200V 和 250V 产品，不断提供具有独特性能的同类中较为出色的导通电阻 (R?DS(on)) 功率 MOSFET。领先的导通电阻 R?DS(on) 和品质因数 (FOM) 特征可降低功耗，提高整体效率并提高功率密度。200V 和 250V 产品系列针对 110V AC 网络照明、HID 灯、直流-直流转换器和有源以太网 (PoE) 等应用进行了优化。

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IPC302N25N3 数据手册

IPC302N25N3

OptiMOS^TM3 Power MOS Transistor Chip

Type

V_(BR)DSS

R_DS(on)

Die size

Thickness

IPC302N25N3

250 V

20 m¹⁾

6.7 * 4.5 mm²

250 m

DESCRIPTION



N-channel enhancement mode

For additional characteristic and max rating refer to the datasheet of IPP200N25N3 G

AQL 0.65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883C

Die bond: soldered or glued

Backside metallization: NiV system

Frontside metallization: AlCu system

Passivation: nitride (only on edge structure)

Package: sawn on foil

Electrical Characteristics on Wafer Level

at T_j= 25 C, unless otherwise specified.

Parameter

Symbol Value

min. typ.

Unit Conditions

max.

Drain-source breakdown voltage V_(BR)DSS250

V_GS= 0V

I_D= 1 mA

Gate threshold voltage

V_GS(th)

V_DS= V_GS

I_D= 270 A

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-resistance

I_DSS

0.1

A V_GS= 0V

V_DS= 200 V

I_GSS

100 nA V_GS= 20 V

V_DS= 0 V

R_DS(on)

16 ³⁾100 ²⁾m V_GS= 10 V

I_D= 2 A

Reverse diode forward on-voltage V_SD

0.7

1.2

V_GS=0 V

I_F= 1 A

Avalanche energy, single pulse

E_AS

40 ⁴⁾

mJ I_D= 30 A, R_GS=25Ω

¹⁾packaged in a PG-TO220-3 (see ref. product)

²⁾limited by wafer test-equipment

³⁾typical bare die R_DS(on); V_GS=10V

⁴⁾Wafer tested. For general avalanche capability refer to the datasheet of IPP200N25N3 G

Infineon Technologies, Rev. 2.0 27.04.2010

12 3

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