型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB65R310CFDAATMA1 | INFINEON |
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Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, M | |
IPB65R380C6 | INFINEON |
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650V CoolMOS C6 Power Transistor | |
IPB65R380C6ATMA1 | INFINEON |
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Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, M | |
IPB65R420CFD | INFINEON |
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650V CoolMOS C6 CFD Power Transistor | |
IPB65R600C6 | INFINEON |
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650V CoolMOS C6 Power Transistor | |
IPB65R660CFD | INFINEON |
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650V CoolMOS CFD Power Transistor | |
IPB65R660CFDA | INFINEON |
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650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先 | |
IPB65R660CFDATMA1 | INFINEON |
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Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Meta | |
IPB70N04S3-07 | INFINEON |
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OptiMOS-T Power-Transistor | |
IPB70N04S307ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Met |