型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB60R180P7ATMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPB60R190C6 | INFINEON |
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Metal Oxide Semiconductor Field Effect Transistor | |
IPB60R190C6ATMA1 | INFINEON |
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Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, M | |
IPB60R190C6XT | INFINEON |
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Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, M | |
IPB60R190P6 | INFINEON |
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Material Content Data Sheet | |
IPB60R190P6_15 | INFINEON |
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Material Content Data Sheet | |
IPB60R199CP | INFINEON |
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CoolMOS Power Transistor | |
IPB60R199CP_09 | INFINEON |
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CoolMOS Power Transistor | |
IPB60R199CPA | INFINEON |
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CoolMOS Power Transistor | |
IPB60R199CPAATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Me |