Datasheet > IPB180P04P4-03

IPB180P04P4-03

更新时间： 2024-09-13 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	163K
描述
OptiMOS-P2 Power-Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPB180P04P4-03 数据手册

Final Data Sheet

IPB180P04P4-03

OptiMOS^®-P2 Power-Transistor

Product Summary

V _DS

R _DS(on)

I _D

-40

2.8

-180

Features

• P-channel - Normal Level - Enhancement mode

PG-TO263-7-3

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Drain

Pin 4, Tab

Gate

Pin 1

Source

Pin 2, 3, 5, 6, 7

Type

Package

Marking

IPB180P04P4-03

PG-TO263-7-3

4QP0403

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V _GS=-10V

Continuous drain current¹⁾

I _D

-180

-131

T _C=100°C,

V _GS=-10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

-720

I _D=-60A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-180

V _GS

P _tot

±20

T _C=25 °C

Power dissipation

150

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2011-04-27

12 3 4 5 6 7...9

中文翻译

下载PDF

与IPB180P04P4-03相关器件

型号	品牌	获取价格	描述	数据表
IPB180P04P403ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, M
IPB180P04P403ATMA2	INFINEON	获取价格	Power Field-Effect Transistor,
IPB180P04P4L-02	INFINEON	获取价格	OptiMOS-P2 Power-Transistor
IPB19DP10NM	INFINEON	获取价格	D2PAK 封装型 100 V OptiMOS? P 沟道 MOSFET 是面向电池管理、
IPB200N15N3	INFINEON	获取价格	OptiMOS™3 Power-Transistor Features Excellent
IPB200N15N3 G	INFINEON	获取价格	与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (F
IPB200N15N3G	INFINEON	获取价格	OptiMOS™3 Power-Transistor Features Excellent
IPB200N15N3GATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
IPB200N25N3 G	INFINEON	获取价格	英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直
IPB200N25N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)