Datasheet > IPB180P04P4-03

IPB180P04P4-03

更新时间： 2024-11-05 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	163K
描述
OptiMOS-P2 Power-Transistor

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中文翻译

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数据手册

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IPB180P04P4-03 数据手册

Final Data Sheet

IPB180P04P4-03

OptiMOS^®-P2 Power-Transistor

Product Summary

V _DS

R _DS(on)

I _D

-40

2.8

-180

Features

• P-channel - Normal Level - Enhancement mode

PG-TO263-7-3

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Drain

Pin 4, Tab

Gate

Pin 1

Source

Pin 2, 3, 5, 6, 7

Type

Package

Marking

IPB180P04P4-03

PG-TO263-7-3

4QP0403

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

V _GS=-10V

Continuous drain current¹⁾

I _D

-180

-131

T _C=100°C,

V _GS=-10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

-720

I _D=-60A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

-180

V _GS

P _tot

±20

T _C=25 °C

Power dissipation

150

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2011-04-27

12 3 4 5 6 7...9

中文翻译

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