Datasheet > IPB17N25S3-100

IPB17N25S3-100

更新时间： 2024-11-06 01:11:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	203K
描述
N-channel - Enhancement mode

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中文翻译

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IPB17N25S3-100 数据手册

IPB17N25S3-100

IPP17N25S3-100

OptiMOS^™-T Power-Transistor

Product Summary

V_DS

250

100

R_DS(on),max

I_D

mΩ

Features

PG-TO263-3-2

PG-TO220-3-1

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

3N25100

IPB17N25S3-100

IPP17N25S3-100

PG-TO263-3-2

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

T _C=100°C, V_GS=10V¹⁾

Continuous drain current

13.3

Pulsed drain current¹⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Reverse diode dv /dt

I _D=5.4A

5.4

dv /dt

V_GS

P_tot

kV/µs

Gate source voltage

±20

107

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.1

page 1

2013-05-13

12 3 4 5 6 7...9

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