是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 湿度敏感等级: | 1 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB019N08NF2S | INFINEON |
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Infineon's StrongIRFET? 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a | |
IPB020N04NG | INFINEON |
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OptiMOS3 Power-Transistor | |
IPB020N08N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPB020N10N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, M | |
IPB020N10N5ATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, M | |
IPB020N10N5LF | INFINEON |
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OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R | |
IPB020N10N5LFATMA1 | INFINEON |
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Power Field-Effect Transistor, 29A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPB020NE7N3 G | INFINEON |
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75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术,这些75V产品同时具 | |
IPB020NE7N3G | INFINEON |
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OptiMOSTM3 Power-Transistor | |
IPB020NE7N3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |