型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB019N08N3G | INFINEON |
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OptiMOS3 Power-transistor | |
IPB019N08N3GXT | INFINEON |
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Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, M | |
IPB019N08N5 | INFINEON |
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与前几代产品相比,英飞凌OptiMOS™5 80V工业功率MOSFETIPB019N08N | |
IPB019N08NF2S | INFINEON |
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Infineon's StrongIRFET? 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a | |
IPB020N04NG | INFINEON |
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OptiMOS3 Power-Transistor | |
IPB020N08N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPB020N10N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, M | |
IPB020N10N5ATMA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, M | |
IPB020N10N5LF | INFINEON |
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OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R | |
IPB020N10N5LFATMA1 | INFINEON |
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Power Field-Effect Transistor, 29A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |