Datasheet > IPB015N08N5

IPB015N08N5

更新时间： 2024-10-15 11:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1006K
描述
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB015N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

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IPB015N08N5 数据手册

IPB015N08N5

MOSFET

OptiMOS^ªꢀꢀ5ꢀPower-Transistor,ꢀ80ꢀV

D²-PAKꢀ7pin

Features

•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.

•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀon-resistanceꢀꢀR_DS(on)

tab

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Drain

Pin 4, tab

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 1

V_DS

Source

Pin 2,3,5,6,7

R_DS(on),max

I_D

1.5

mΩ

260

207

178

Q_oss

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPB015N08N5

PG-TO263-7

015N08N5

¹⁾J-STD20 and JESD22

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2020-11-16

12 3 4 5 6 7...11

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