Datasheet > IPA65R1K0CE

IPA65R1K0CE

更新时间： 2024-11-27 14:55:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	990K
描述

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中文翻译

获取价格

数据手册

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IPA65R1K0CE 数据手册

IPA65R1K0CE

MOSFET

TO-220ꢀFP

650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa

price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive

applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest

efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast

switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand

offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.

Features

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss

•ꢀVeryꢀhighꢀcommutationꢀruggedness

•ꢀEasyꢀtoꢀuse/drive

Drain

Pin 2, Tab

•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound

•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications

Gate

Pin 1

Applications

PCꢀSilverbox,ꢀAdapters,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀLighting

Source

Pin 3

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

I_d.typ

Value

700

1000

7.2

Unit

mΩ

Q_g.typ

15.3

I_D,pulse

E_oss@400V

1.5

µJ

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TO 220 FullPAK

Marking

RelatedꢀLinks

IPA65R1K0CE

65S1K0CE

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2016-02-19

12 3 4 5 6 7...15

中文翻译

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