ACS630MS
Radiation Hardened EDAC
(Error Detection and Correction Circuit)
January 1996
Features
Pinouts
28 PIN CERAMIC DUAL-IN-LINE, MIL-STD-1835
DESIGNATOR CDIP2-T28, LEAD FINISH C
TOP VIEW
• Devices QML Qualified in Accordance with MIL-PRF-38535
• Detailed Electrical and Screening Requirements are Contained in
SMD# 5962-96711 and Intersil’ QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
DEF
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
1
2
3
4
5
6
7
8
9
28 VCC
27 SEF
26 S1
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si)
• Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day
(Typ)
25 S0
• SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg
• Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse
• Dose Rate Survivability. . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range . . . . . . . . . . . . . . . . . . -55oC to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V
24 CB0
23 CB1
22 CB2
21 CB3
20
CB4
DB8 10
DB9 11
19 CB5
18 DB15
17 DB14
16 DB13
15 DB12
DB10 12
DB11 13
GND 14
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current ≤ 1µA at VOL, VOH
• Fast Propagation Delay . . . . . . . . . . . . . . . . 37ns (Max), 24ns (Typ)
28 PIN CERAMIC FLATPACK, MIL-STD-1835
DESIGNATOR CDFP3-F28, LEAD FINISH C
TOP VIEW
Description
The Intersil ACS630MS is a Radiation Hardened 16-bit parallel error
detection and correction circuit. It uses a modified Hamming code to
generate a 6-bit check word from each 16-bit data word. The check word
is stored with the data word during a memory write cycle; during a
memory read cycle a 22-bit word is taken form memory and checked for
errors. Single bit errors in the data words are flagged and corrected.
Single bit errors in check words are flagged but not corrected. The
position of the incorrect bit is pinpointed, in both cases, by the 6-bit error
syndrome code which is output during the error correction cycle.
DEF
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
DB8
DB9
DB10
DB11
GND
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
SEF
S1
S0
CB0
CB1
CB2
CB3
CB4
CB5
DB15
DB14
DB13
DB12
9
10
11
12
13
14
The ACS630MS utilizes advanced CMOS/SOS technology to achieve
high-speed operation. This device is a member of a radiation hardened,
high-speed, CMOS/SOS Logic Family.
The ACS630MS is supplied in a 28 lead Ceramic Flatpack (K suffix) or a
28 Lead Ceramic Dual-In-Line Package (D suffix).
Ordering Information
PART NUMBER
5962F9671101VXC
5962F9671101VYC
ACS630D/Sample
ACS630K/Sample
ACS630HMSR
TEMPERATURE RANGE
SCREENING LEVEL
MIL-PRF-38535 Class V
MIL-PRF-38535 Class V
Sample
PACKAGE
o
o
-55 C to +125 C
28 Lead SBDIP
o
o
-55 C to +125 C
28 Lead Ceramic Flatpack
28 Lead SBDIP
o
25 C
o
25 C
Sample
28 Lead Ceramic Flatpack
Die
o
25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518781
File Number 3199.1
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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