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5962F9582301QYC PDF预览

5962F9582301QYC

更新时间: 2024-02-13 04:30:00
品牌 Logo 应用领域
英特矽尔 - INTERSIL 内存集成电路静态存储器
页数 文件大小 规格书
8页 129K
描述
Radiation Hardened 8K x 8 SOS CMOS Static RAM

5962F9582301QYC 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.6
Is Samacsys:N最长访问时间:50 ns
JESD-30 代码:R-CDFP-F28JESD-609代码:e4
长度:18.288 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
筛选级别:MIL-PRF-38535 Class V座面最大高度:2.92 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:GOLD端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:300k Rad(Si) V宽度:12.446 mm
Base Number Matches:1

5962F9582301QYC 数据手册

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HS-65647RH  
TM  
Data Sheet  
August 2000  
File Number 2928.3  
Radiation Hardened 8K x 8 SOS CMOS  
Static RAM  
Features  
• Electrically Screened to SMD # 5962-95823  
The Intersil HS-65647RH is a fully asynchronous 8K x 8  
radiation hardened static RAM. This RAM is fabricated using  
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.  
This technology gives exceptional hardness to all types of  
radiation, including neutron fluence, total ionizing dose, high  
intensity ionizing dose rates, and cosmic rays.  
• QML Qualified per MIL-PRF-38535 Requirements  
• 1.2 Micron Radiation Hardened SOS CMOS  
- Total Dose. . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)  
11  
- Transient Upset. . . . . . . . . . . . . . . . .>1 x 10 rad(Si)/s  
-12  
- Single Event Upset . . . . . . . . < 1 x 10  
Errors/Bit-Day  
• Latch-up Free  
Low power operation is provided by a fully static design. Low  
standby power can be achieved without pull-up resistors,  
due to the gated input buffer design.  
• LET Threshold . . . . . . . . . . . . . . . . . . >250 MEV/mg/cm2  
• Low Standby Supply Current . . . . . . . . . . . . . 10mA (Max)  
• Low Operating Supply Current . . . . . . . . . .100mA (2MHz)  
• Fast Access Time. . . . . . . . . . . . . 50ns (Max), 35ns (Typ)  
• High Output Drive Capability  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-95823. A “hot-link” is provided  
on our homepage for downloading.  
• Gated Input Buffers (Gated by E2)  
• Six Transistor Memory Cell  
www.intersil.com/spacedefense/space.asp  
• Fully Static Design  
Ordering Information  
• Asynchronous Operation  
INTERNAL MKT.  
NUMBER  
TEMP.  
• CMOS Inputs  
o
ORDERING NUMBER  
5962F9582301QXC  
5962F9582301QYC  
5962F9582301VXC  
5962F9582301VYC  
RANGE ( C)  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
• 5V Single Power Supply  
HS1-65647RH-8  
o
o
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C  
• Industry Standard JEDEC Pinout  
HS-965647RH-8  
HS1-65647RH-Q  
HS9-65647RH-Q  
Functional Diagram  
HS1-65647RH/PROTO HS1-65647RH/PROTO  
HS9-65647RH/PROTO HS9-65647RH/PROTO  
AI  
ROW  
ROW  
DECODER  
128 X 512  
MEMORY ARRAY  
TRUTH TABLE  
I/O0  
E1  
X
1
E2  
0
G
X
X
1
W
X
X
1
MODE  
INPUT  
DATA  
CIRCUIT  
COLUMN I/O  
Low Power Standby  
Disabled  
Enabled  
COLUMN DECODER  
1
I/O7  
E2  
0
1
AI COL  
0
1
0
1
Read  
0
1
X
0
Write  
E1  
CONTROL  
CIRCUIT  
G
W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

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