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5962F0721801VXC PDF预览

5962F0721801VXC

更新时间: 2024-02-03 02:20:49
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管
页数 文件大小 规格书
4页 192K
描述
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

5962F0721801VXC 技术参数

生命周期:Active零件包装代码:DFP
包装说明:FLATPACK, R-CDFP-F16针数:16
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71外壳连接:ISOLATED
集电极-发射极最大电压:8 V配置:COMPLEX
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFP-F16
元件数量:5端子数量:16
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK极性/信道类型:NPN AND PNP
参考标准:MIL-38535表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICON

5962F0721801VXC 数据手册

 浏览型号5962F0721801VXC的Datasheet PDF文件第2页浏览型号5962F0721801VXC的Datasheet PDF文件第3页浏览型号5962F0721801VXC的Datasheet PDF文件第4页 
Radiation Hardened Ultra High Frequency  
NPN/PNP Transistor Arrays  
ISL73096RH, ISL73127RH, ISL73128RH  
The ISL73096RH, ISL73127RH and ISL73128RH are  
radiation hardened bipolar transistor arrays. The  
Features  
• Electrically Screened to SMD # 5962-07218  
ISL73096RH consists of three NPN transistors and two  
PNP transistors on a common substrate. The  
ISL73127RH consists of five NPN transistors on a  
common substrate. The ISL73128RH consists of five PNP  
transistors on a common substrate. One of our bonded  
wafer, dielectrically isolated fabrication processes  
provides an immunity to Single Event Latch-up and the  
capability of highly reliable performance in any radiation  
environment.  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
5
- Gamma Dose (γ) . . . . . . . . . . 3 x 10 RAD(Si)  
- SEL Immune. . Bonded Wafer Dielectric Isolation  
• NPN Gain Bandwidth Product (F ) . . . 8GHz (Typ)  
T
• NPN Current Gain (h ). . . . . . . . . . . . 130 (Typ)  
FE  
• NPN Early Voltage (V ) . . . . . . . . . . . . 50V (Typ)  
A
The high gain-bandwidth product and low noise figure of  
these transistors make them ideal for use in high  
frequency amplifier and mixer applications. Monolithic  
construction of the NPN and PNP transistors provides the  
closest electrical and thermal matching possible. Access  
is provided to each terminal of the transistors for  
maximum application flexibility.  
• PNP Gain Bandwidth Product (F ). . . 5.5GHz (Typ)  
T
• PNP Current Gain (h ). . . . . . . . . . . . . 60 (Typ)  
FE  
• PNP Early Voltage (V ) . . . . . . . . . . . . 20V (Typ)  
A
• Noise Figure (50Ω) at 1GHz. . . . . . . . 3.5dB (Typ)  
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)  
• Complete Isolation Between Transistors  
Specifications for Rad Hard QML devices are  
controlled by the Defense Supply Center in  
Columbus (DSCC). The SMD numbers listed here  
must be used when ordering.  
Applications  
• High Frequency Amplifiers and Mixers  
- Refer to Application Note AN1503  
Detailed Electrical Specifications for these  
devices are contained in SMD 5962-07218. A  
“hot-link” is provided on our website for  
downloading.  
• High Frequency Converters  
• Synchronous Detector  
Ordering Information  
TEMP. RANGE  
(°C)  
PACKAGE  
(Pb-free)  
ORDERING NUMBER  
5962F0721801V9A  
PART NUMBER  
ISL73096RHVX  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
DIE  
5962F0721801VXC  
5962F0721802V9A  
5962F0721802VXC  
5962F0721803V9A  
5962F0721803VXC  
ISL73096RHF/PROTO  
ISL73096RHX/SAMPLE  
ISL73127RHF/PROTO  
ISL73127RHX/SAMPLE  
ISL73096RHVF (Notes 1, 2)  
ISL73127RHVX  
16 LD FLATPACK  
DIE  
ISL73127RHVF (Notes 1, 2)  
ISL73128RHVX  
16 LD FLATPACK  
DIE  
ISL73128RHVF (Notes 1, 2)  
ISL73096RHF/PROTO  
ISL73096RHX/SAMPLE  
ISL73127RHF/PROTO  
ISL73127RHX/SAMPLE  
16 LD FLATPACK  
DIE  
DIE  
November 12, 2009  
FN6475.3  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2007, 2009. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners..  

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