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5962F0721801V9A PDF预览

5962F0721801V9A

更新时间： 2024-01-29 13:57:54
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管
页数 文件大小 规格书
2页 91K
描述
Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array

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5962F0721801V9A 技术参数

生命周期：Active零件包装代码：DIE
包装说明：UNCASED CHIP, R-XUUC-N16针数：16
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.71Is Samacsys：N
集电极-发射极最大电压：8 V配置：COMPLEX
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-XUUC-N16
元件数量：5端子数量：16
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：UNCASED CHIP极性/信道类型：NPN AND PNP
参考标准：MIL-38535表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管元件材料：SILICONBase Number Matches：1

5962F0721801V9A 数据手册

 浏览型号5962F0721801V9A的Datasheet PDF文件第2页 
ISL73096RH  
®
Data Sheet  
March 29, 2007  
FN6475.0  
Radiation Hardened Ultra High Frequency  
NPN-PNP Transistor Array  
Features  
• Electrically Screened to SMD # 5962-07218  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
The ISL73096RH is a radiation hardened transistor array  
consisting of three NPN transistors and two PNP transistors  
on a common substrate. One of our bonded wafer,  
dielectrically isolated fabrication processes provides an  
immunity to Single Event Latch-up and the capability of  
highly reliable performance in any radiation environment.  
5
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)  
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation  
• NPN Gain Bandwidth Product (F ) . . . . . . . . .8GHz (Typ)  
T
The high gain-bandwidth product and low noise figure of  
these transistors make them ideal for use in high frequency  
amplifier and mixer applications. Monolithic construction of  
the NPN and PNP transistors provides the closest electrical  
and thermal matching possible. Access is provided to each  
terminal of the transistors for maximum application flexibility.  
• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . 130 (Typ)  
FE  
• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 50V (Typ)  
A
• PNP Gain Bandwidth Product (F ). . . . . . . . 5.5GHz (Typ)  
T
• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . 60 (Typ)  
FE  
• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 20V (Typ)  
A
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)  
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-07218. A “hot-link” is provided  
on our website for downloading.  
Applications  
• High Frequency Amplifiers and Mixers  
- Refer to Application Note AN9315  
Pinout  
• High Frequency Converters  
• Synchronous Detectors  
ISL73096RH  
(16 LD SBDIP) CDIP2-T16  
TOP VIEW  
Ordering Information  
Q1B  
Q1E  
Q1C  
Q2E  
Q2B  
Q2C  
Q3E  
Q3B  
NC  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
INTERNAL  
TEMP. RANGE  
(°C)  
Q
1
Q5C  
Q5B  
Q5E  
Q4C  
ORDERING NUMBER  
MKT. NUMBER  
Q
5
5962F0721801V9A  
ISL73096RHVX  
-55 to +125  
Q
2
Q
4
11 Q4B  
10 Q4E  
Q
3
9
Q3C  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2007. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
12

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