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2N7288H PDF预览

2N7288H

更新时间: 2024-01-05 05:05:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
5页 50K
描述
Radiation Hardened N-Channel Power MOSFETs

2N7288H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-MSFM-P3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
其他特性:RADIATION HARDENED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):9 A
最大漏源导通电阻:0.415 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-MSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:75 W最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):27 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N7288H 数据手册

 浏览型号2N7288H的Datasheet PDF文件第2页浏览型号2N7288H的Datasheet PDF文件第3页浏览型号2N7288H的Datasheet PDF文件第4页浏览型号2N7288H的Datasheet PDF文件第5页 
2N7288D, 2N7288R  
2N7288H  
S E M I C O N D U C T O R  
REGISTRATION PENDING  
Available as FRS244 (D, R, H)  
November 1994  
Radiation Hardened  
N-Channel Power MOSFETs  
Features  
Package  
• 9A, 250V, RDS(on) = 0.415  
TO-257AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(Si)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
2
• Single Event  
- Typically Survives 1E5ions/cm Having an  
2
LET 35MeV/mg/cm and a Range 30µm at 80% BVDSS  
Symbol  
Description  
The Harris Semiconductor Sector has designed a series of SECOND GENERA-  
TION hardened power MOSFETs of both N and P channel enhancement types  
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m.  
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron  
hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod-  
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-  
iting and 2E12 with current limiting. Heavy ion survival from signal event drain  
burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.  
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown above.  
Reliability screening is available as either non TX (commercial), TX equivalent of  
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-  
19500. Contact the Harris Semiconductor High-Reliability Marketing group for any  
desired deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
2N7288D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
250  
250  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
9
6
27  
±20  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
75  
30  
0.60  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
27  
9
27  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.  
File Number 3256.1  
Copyright © Harris Corporation 1992  
1

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