是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.81 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 200 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.25 W |
子类别: | FET General Purpose Small Signal | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5199-E3 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET |
获取价格 |
|
2N520 | ETC | TRANSISTOR | BJT | PNP | 12V V(BR)CEO | TO-5 |
获取价格 |
|
2N5200 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46 |
获取价格 |
|
2N5202 | GE | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
获取价格 |
|
2N5202 | NJSEMI | HIGH-SPEED, SILICON N-P-N |
获取价格 |
|
2N5202 | ASI | Transistor |
获取价格 |