5秒后页面跳转
2N6452 PDF预览

2N6452

更新时间: 2024-02-26 12:10:58
品牌 Logo 应用领域
INTERFET 晶体小信号场效应晶体管
页数 文件大小 规格书
1页 96K
描述
N-Channel Silicon Junction Field-Effect Transistor

2N6452 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliantHTS代码:8541.21.00.95
风险等级:5.36Is Samacsys:N
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-72
JESD-30 代码:O-MBCY-W4元件数量:1
端子数量:4工作模式:DEPLETION MODE
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N6452 数据手册

  
01/99  
B-25  
2N6451, 2N6452  
N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Audio Amplifiers  
¥ Low-Noise, High Gain  
Amplifiers  
A
2N6451  
– 20 V  
– 20 V  
10 mA  
360 mW  
2N6452  
– 25 V  
– 25 V  
10 mA  
360 mW  
Reverse Gate Source Voltage  
Reverse Gate Drain Voltage  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
¥ Low-Noise Preamplifiers  
2.88 mW/°C 2.88 mW/°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
2N6451  
2N6452  
Process NJ132L  
Test Conditions  
I = – 1 µA, V = ØV  
Min Max Min Max Unit  
Gate Source Breakdown Voltage  
V
– 20  
– 25  
V
nA  
(BR)GSS  
G
DS  
– 0.1  
– 0.2  
V
= – 10V, V = ØV  
GS  
DS  
– 0.5 nA  
µA  
V
= – 15V, V = ØV  
GS  
DS  
Gate Reverse Current  
I
GSS  
V
= – 10V, V = ØV  
T = 125°C  
GS  
DS  
A
– 1  
– 0.5 – 3.5 – 0.5 – 3.5  
µA  
V
V
= – 15V, V = ØV  
T = 125°C  
GS  
DS  
A
Gate Source Cutoff Voltage  
V
V
= 10V, I = 0.5 nA  
GS(OFF)  
DS  
D
Drain Saturation Current (Pulsed)  
I
5
20  
5
20  
mA  
V
= 10V, V = ØV  
DSS  
DS  
GS  
Dynamic Electrical Characteristics  
15  
30  
50  
25  
5
15  
30  
50  
25  
5
mS  
mS  
µS  
µS  
pF  
pF  
pF  
pF  
V
= 10V, I = 5 mA  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Common Source  
Forward Transmittance  
DS  
D
| Y |  
fs  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source  
Output Conductance  
DS  
D
| Y |  
os  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source  
Input Capacitance  
DS  
D
C
iss  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source Reverse  
Transfer Capacitance  
DS  
D
C
rss  
V
= 10V, I = 15 mA  
DS  
D
5
3
10 nV/Hz  
V
= 10V, I = 5 mA  
Equivalent Short Circuit  
Input Noise Voltage  
DS  
D
e¯  
N
8
nV/Hz  
V
= 10V, I = 5 mA  
DS  
D
I = 5 mA  
= 10V,  
D
V
DS  
Noise Figure  
NF  
1.5  
2.5  
dB  
f = 10 Hz  
R = 10 k  
G
TOÐ72 Package  
Dimensions in Inches (mm)  
Pin Configuration  
1 Source, 2 Drain, 3 Gate, 4 Case  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

与2N6452相关器件

型号 品牌 描述 获取价格 数据表
2N6453 INTERFET N-Channel Silicon Junction Field-Effect Transistor

获取价格

2N6454 INTERFET N-Channel Silicon Junction Field-Effect Transistor

获取价格

2N6461 SEME-LAB Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

获取价格

2N6461 NJSEMI N-P-N SILICON TRANSISTORS

获取价格

2N6462 NJSEMI N-P-N SILICON TRANSISTORS

获取价格

2N6462 SEME-LAB Bipolar NPN Device

获取价格