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28F128 PDF预览

28F128

更新时间: 2022-11-25 16:12:58
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
58页 355K
描述
3 Volt Intel StrataFlash Memory

28F128 数据手册

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3 Volt Intel® StrataFlashMemory  
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)  
Preliminary Datasheet  
Product Features  
High-Density Symmetrically-Blocked  
Architecture  
Packaging  
56-Lead TSOP Package  
®
128 128-Kbyte Erase Blocks (128 M)  
64 128-Kbyte Erase Blocks (64 M)  
32 128-Kbyte Erase Blocks (32 M)  
High Performance Interface Asynchronous  
Page Mode Reads  
64-Ball Intel Easy BGA Package  
Cross-Compatible Command Support Intel  
Basic Command Set  
Common Flash Interface  
Scalable Command Set  
110/25 ns Read Access Time (32 M)  
120/25 ns Read Access Time (64 M)  
150/25 ns Read Access Time (128 M)  
2.7 V3.6 V VCC Operation  
32-Byte Write Buffer  
6 µs per Byte Effective Programming  
Time  
12.8M Total Min. Erase Cycles (128 Mbit)  
6.4M Total Min. Erase Cycles (64 Mbit)  
3.2M Total Min. Erase Cycles (32 Mbit)  
100K Minimum Erase Cycles per Block  
Automation Suspend Options  
Block Erase Suspend to Read  
Block Erase Suspend to Program  
Program Suspend to Read  
128-bit Protection Register  
64-bit Unique Device Identifier  
64-bit User Programmable OTP Cells  
Enhanced Data Protection Features  
Absolute Protection with VPEN = GND  
Flexible Block Locking  
Block Erase/Program Lockout during  
Power Transitions  
®
0.25 µ Intel StrataFlashMemory  
Technology  
Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel®  
StrataFlashmemory products provide 2X the bits in 1X the space, with new features for mainstream  
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring  
reliable, two-bit-per-cell storage technology to the flash market segment.  
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,  
support for code and data storage, and easy migration to future devices.  
Using the same NOR-based ETOXtechnology as Intels one-bit-per-cell products, Intel StrataFlash  
memory devices take advantage of over one billion units of manufacturing experience since 1987. As a  
result, Intel StrataFlash components are ideal for code and data applications where high density and low  
cost are required. Examples include networking, telecommunications, digital set top boxes, audio  
recording, and digital imaging.  
By applying FlashFilememory family pinouts, Intel StrataFlash memory components allow easy design  
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation  
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.  
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.  
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take  
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.  
Manufactured on Intel® 0.25 micron ETOXVI process technology, Intel StrataFlash memory provides  
the highest levels of quality and reliability.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290667-008  
April 2001  

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