Datasheet > INJ0312AC1-T150

INJ0312AC1-T150

更新时间： 2025-07-19 20:02:35

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
5页	342K
描述
Isahaya Package:Mini; JEITA Package:SC-59; AEC correspondence:○; Type:Pch; P(mW):500; VDSS(V):-50; VGSS(V):±20; ID(A):-1.1; Drive voltage(V):-4; Ron(Ω):0.4; Ciss(pF):165; Coss(pF):35; ton(ns):80; toff(ns):490;

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INJ0312AC1-T150 数据手册

INJ0312AC1-T150

High Speed Switching

Silicon P-channel MOSFET

AEC-Q101 COMPLIANCE

DESCRIPTION

OUTLINE DRAWING

UNIT：ｍｍ

INJ0312AC1 is a Silicon P-channel MOSFET.

This product is most suitable for use such as portable

machinery, because of low voltage drive and low on resistance.

2.8

1.5

0.65

①

②

FEATURE

・Input impedance is high, and not necessary to

consider a drive electric current.

・High drain current I_D=-1.1A

・Drive voltage -4.0V

③

・Low on Resistance.

RDS(on)=400mΩ(＠VGS=-4.5V) TYP.

RDS(on)=350mΩ(＠VGS=-10V) TYP.

・High speed switching.

・Small package for easy mounting.

APPLICATION

Switching

JEITA：SC-59

JEDEC：Similar to TO-236

TERMINAL CONNECTER

①：GATE

MAXIMUM RATINGS（Ta=25℃）

Symbol

VDSS

VGSS

Parameter

Rating

-50

Unit

②：SOURCE

Drain-Source Voltage

Gate-Source Voltage

Drain Current(DC)

③：DRAIN

±20

-1.1

-4.0

500

IDP

Drain current(Pulse) ※1

Total Power Dissipation ※2

EQUIVALENT CIRCUIT

MARKING

Tch

Channel Temperature

Storage temperature

+150

℃

Tstg

-55～+150

※1：Pw≦10μs, Duty cycle≦1%

Ｊ・９

※2：Package mounted on 45mm×38mm×1mm glass-epoxy substrate.

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limit

TYP

Parameter

Symbol

Test Condition

Unit

MIN

-50

MAX

Drain-Source Breakdown Voltage

Gate-Source Leak current

Zero Gate Voltage Drain Current

Gate Threshold Voltage

V(BR)DSS

I_D=-100μA, V_GS=0V

IGSS

IDSS

Vth

V_GS=±20V, V_DS=0V

V_DS=-50V, V_GS=0V

I_D=-250μA, V_DS=V_GS

V_DS=-10V, I_D=-1A

I_D=-1A, V_GS=-4.5V

I_D=-1A, V_GS=-10V

±10

μA

-1.0

-2.5

Forward Transfer Admittance

| Yfs |

1.8

400

350

165

mΩ

Static Drain-Source On-State Resistance

RDS(ON)

Ciss

Input Capacitance

V_DS=-10V, V_GS=0V, f=1MHz

Coss

Output Capacitance

ton

toff

V_DD=-15V, I_D=-1A

Switching Time

V_GS=0～-10V

490

12 3 4 5

中文翻译

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