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TLE4923 PDF预览

TLE4923

更新时间: 2024-02-24 00:55:39
品牌 Logo 应用领域
英飞凌 - INFINEON 传感器换能器磁场传感器输出元件
页数 文件大小 规格书
18页 154K
描述
Dynamic Differential Hall Effect Sensor IC

TLE4923 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.77Is Samacsys:N
其他特性:REVERSE POLARITY PROTECTION主体宽度:1 mm
主体高度:3.71 mm主体长度或直径:5.16 mm
外壳:PLASTIC滞后:1.5 mT
JESD-609代码:e3最大磁场范围:2 mT
最小磁场范围:2 mT安装特点:THROUGH HOLE MOUNT
最大工作电流:13.6 mA输出接口类型:2-WIRE INTERFACE
输出类型:DIGITAL OUTPUT封装形状/形式:RECTANGULAR
灵敏度(mV / G):8.5 mV/G传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT
最大供电电压:18 V最小供电电压:4.5 V
表面贴装:NO端子面层:MATTE TIN
端接类型:SOLDERBase Number Matches:1

TLE4923 数据手册

 浏览型号TLE4923的Datasheet PDF文件第2页浏览型号TLE4923的Datasheet PDF文件第3页浏览型号TLE4923的Datasheet PDF文件第4页浏览型号TLE4923的Datasheet PDF文件第5页浏览型号TLE4923的Datasheet PDF文件第6页浏览型号TLE4923的Datasheet PDF文件第7页 
Dynamic Differential Hall Effect Sensor IC  
TLE 4923  
Bipolar IC  
Features  
• Advanced performance  
• Higher sensitivity  
• Symmetrical thresholds  
• High piezo resistivity  
• Reduced power consumption  
• South and north pole pre-induction possible  
• AC coupled  
• Digital output signal  
P-SSO-3-6  
• Two-wire interface  
• Large temperature range  
• Large airgap  
• Low cut-off frequency  
• Protection against reversed polarity  
Type  
Ordering Code  
Package  
TLE 4923  
New type  
Q62705-K408  
P-SSO-3-6  
The differential Hall effect sensor TLE 4923 is compatible to the TLE 4921-3U, except  
for having a 2-wire interface. The TLE 4923 provides high sensitivity, a superior stability  
over temperature and symmetrical thresholds in order to achieve a stable duty cycle.  
TLE 4923 is particularly suitable for rotational speed detection and timing applications of  
ferromagnetic toothed wheels such as in anti-lock braking systems, transmissions,  
crankshafts, etc. The integrated circuit (based on Hall effect) provides a digital signal  
output with frequency proportional to the speed of rotation. Unlike other rotational  
sensors differential Hall ICs are not influenced by radial vibration within the effective  
airgap of the sensor and require no external signal processing.  
Semiconductor Group  
1
1998-04-29  

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