Datasheet > SFH600-1

SFH600-1

更新时间： 2024-02-01 17:33:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体光电晶体管光电晶体管输出元件
页数	文件大小	规格书
4页	164K
描述
TRIOS PHOTOTRANSISTOR OPTOCOUPLER

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SFH600-1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
HTS代码：	8541.40.80.00	风险等级：	5.59
其他特性：	UL RECOGNIZED, VDE APPROVED	Coll-Emtr Bkdn Voltage-Min：	70 V
配置：	SINGLE	标称电流传输比：	63%
最大暗电源：	50 nA	最大正向电流：	0.06 A
最大绝缘电压：	5300 V	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	Base Number Matches：	1

SFH600-1 数据手册

SFH600 SERIES

TRIOS * PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• High Current Transfer Ratios

SFH600-0, 40 to 80%

Dimensions in inches (mm)

Pin One ID

SFH600-1, 63 to 125%

Anode

Cathode

Base

SFH600-2, 100 to 200%

SFH600-3, 160 to 320%

• Isolation Test Voltage (1 Sec.), 5300 VACRMS

• VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA

• High Quality Premium Device

• Long Term Stability

.248 (6.30)

.256 (6.50)

Collector

Emitter

.335 (8.50)

.343 (8.70)

.300 (7.62)

typ.

• Storage Temperature, –55∞ to +150∞C

• Underwriters Lab File #E52744

.039

(1.00)

Min.

V_E

•

VDE 0884 Available with Option 1

.130 (3.30)

.150 (3.81)

DESCRIPTION

4°

18° typ.

.110 (2.79)

.150 (3.81)

The SFH600 is an optocoupler with a GaAs LED

emitter which is optically coupled with a silicon pla-

nar phototransistor detector. The component is

packaged in a plastic plug-in case, 20 AB DIN

41866.

typ.

.020 (.051) min.

.010 (.25)

.014 (.35)

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

.300 (7.62)

.347 (8.82)

.100 (2.54) typ.

The coupler transmits signals between two electri-

cally isolated circuits. The potential difference

between the circuits to be coupled is not allowed to

exceed the maximum permissible insulating volt-

age.

Characteristics (T =25°C)

Symbol

Unit

Condition

Emitter

Maximum Ratings

Emitter

Forward Voltage

Breakdown Voltage

Reverse Current

Capacitance

1.25 (≤1.65)

I =60 mA

Reverse Voltage................................................. 6 V

DC Forward Current...................................... 60 mA

Surge Forward Current (t =10 µs).................. 2.5 A

≥6

I =10 µA

0.01 (≤10)

µA

V =6 V

Total Power Dissipation.............................. 100 mW

V =0 V, f=1 MHz

Detector

Collector-Emitter Voltage ................................ 70 V

Emitter-Base Voltage ....................................... 7 V

Collector Current........................................... 50 mA

Collector Current (t=1 ms).......................... 100 mA

Power Dissipation ...................................... 150 mW

Thermal Resistance

Detector

750

°C/W

THJamb

Capacitance

f=1 MHz

Collector-Emitter

Collector-Base

Emitter-Base

5.2

6.5

9.5

=5 V

Package

=5 V

Isolation Test Voltage (between emitter and

detector referred to climate DIN 40046,

Thermal Resistance

500

°C/W

THJamb

part 2, Nov. 74) (t=1 sec.)..............5300 VAC

RMS

Package

Creepage ......................................................≥7 mm

Clearance .......................................................... ≥7 mm

Isolation Thickness between Emitter &

Saturation Voltage,

Collector-Emitter

I =10 mA,

0.25 (≤0.4)

I =2.5 mA

CEsat

Detector.....................................................≥0.4 mm

Comparative Tracking Index per

Coupling Capacitance

0.6

V =0, f=1 MHz

DIN IEC 112/VDE0303, part 1........................175

Isolation Resistance

*TRIOS—TRansparent IOn Shield

V =500 V, T =25°C................................... ≥10

Ω

V =500 V, T =100°C................................. ≥10

Storage Temperature Range........ –55°C to +150°C

Ambient Temperature Range ....... –55°C to +100°C

Junction Temperature ....................................100°C

Soldering Temperature (max. 10 s, dip

soldering: distance to seating plane

≥1.5 mm) ....................................................260°C

5–1

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