BTS7751G

更新时间： 2024-01-24 12:23:52

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口接口集成电路光电二极管
页数	文件大小	规格书
16页	278K
描述
TrilithIC

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技术参数
数据手册

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BTS7751G 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Not Recommended	零件包装代码：	SOIC
包装说明：	PLASTIC, SO-28	针数：	28
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.68
Is Samacsys：	N	内置保护：	TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE
驱动器位数：	4	接口集成电路类型：	HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G28	长度：	18.1 mm
湿度敏感等级：	3	功能数量：	1
端子数量：	28	输出电流流向：	SOURCE AND SINK
最大输出电流：	0.002 A	标称输出峰值电流：	28 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP28,.4	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	8/18 V	认证状态：	Not Qualified
座面最大高度：	2.65 mm	子类别：	Peripheral Drivers
最大供电电压：	42 V	最小供电电压：	1.8 V
表面贴装：	YES	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	180 µs
接通时间：	180 µs	宽度：	7.6 mm
Base Number Matches：	1

BTS7751G 数据手册

TrilithIC

BTS 7751 G

Data Sheet

Overview

1.1

Features

• Quad D-MOS switch driver

• Free configurable as bridge or quad-switch

• Optimized for DC motor management applications

• Low R_{DS ON}: 70 mΩ high-side switch, 45 mΩ low-

side switch (typical values @ 25 °C)

• Maximum peak current: typ. 14 A @ 25 °C=

• Very low quiescent current: typ. 5 µA @ 25 °C=

• Small outline, enhanced power P-DSO-package

• Full short-circuit-protection

P-DSO-28-14

• Operates up to 40 V

• Status flag diagnosis

• Overtemperature shut down with hysteresis

• Internal clamp diodes

• Open load detection in Off-mode

• Under-voltage detection with hysteresis

• PWM frequencies up to 1 kHz

Type

Ordering Code

Package

BTS 7751 G

Q67007-A9553

P-DSO-28-14

1.2

Description

The BTS 7751 G is part of the TrilithIC family containing three dies in one package:

One double high-side switch and two low-side switches. The drains of these three

vertical DMOS chips are mounted on separated lead frames. The sources are connected

to individual pins, so the BTS 7751 G can be used in H-bridge- as well as in any other

configuration. Both the double high-side and the two low-side switches of the

BTS 7751 G are manufactured in SMART SIPMOS^®technology which combines low

_{DS ON}vertical DMOS power stages with CMOS control circuitry. The high-side switch is

fully protected and contains the control and diagnosis circuitry. Also the low-side

switches are fully protected, the equivalent standard product is the BSP 78.

In contrast to the BTS 7750 G, the BTS 7751 G offers an open load in Off-mode

detection and slightly increased current limitation.

Data Sheet

2003-03-06

12 3 4 5 6 7...16

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