®
PROFET
BTS721L1
Smart Four Channel Highside Power Switch
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Features
Vbb(AZ)
43
5.0 ... 34
V
V
•
•
•
•
•
Overload protection
V
bb(on)
Current limitation
two parallel four parallel
one
100
2.9
8
Short-circuit protection
Thermal shutdown
Overvoltage protection
(including load dump)
50
4.3
8
25
6.3
8
mΩ
A
A
Current limitation
IL(SCr)
•
•
•
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
1
)
•
• Open load detection in ON-state
•
•
•
CMOS compatible input
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
bb
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
•
•
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
Symbol Function
Positive power supply voltage. Design the
Pin configuration (top view)
V
bb
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
V
1 •
20 V
19 V
18 OUT1
17 OUT2
bb
bb
GND1/2 2
IN1 3
ST1/2 4
IN2 5
bb
IN1
IN2
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
IN3
IN4
16 V
bb
GND3/4 6
IN3 7
ST3/4 8
IN4 9
15 V
14 OUT3
13 OUT4
bb
OUT1
OUT2
OUT3
OUT4
ST1/2
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
17
14
13
4
12 V
bb
V
10
11 V
bb
bb
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
8
ST3/4
2
6
GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)
1)
With external current limit (e.g. resistor R =150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96