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BTS660PE3180A

更新时间: 2024-01-07 07:28:15
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
16页 306K
描述
Smart Highside High Current Power Switch

BTS660PE3180A 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.35
Is Samacsys:N内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G7
功能数量:1端子数量:7
输出电流流向:SOURCE标称输出峰值电流:145 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大供电电压:55 V最小供电电压:5 V
标称供电电压:12 V表面贴装:YES
技术:MOS端子形式:GULL WING
端子位置:SINGLE断开时间:110 µs
接通时间:320 µsBase Number Matches:1

BTS660PE3180A 数据手册

 浏览型号BTS660PE3180A的Datasheet PDF文件第2页浏览型号BTS660PE3180A的Datasheet PDF文件第3页浏览型号BTS660PE3180A的Datasheet PDF文件第4页浏览型号BTS660PE3180A的Datasheet PDF文件第5页浏览型号BTS660PE3180A的Datasheet PDF文件第6页浏览型号BTS660PE3180A的Datasheet PDF文件第7页 
®
PROFET Data Sheet BTS660P  
Smart Highside High Current Power Switch  
Product Summary  
Overvoltage protection  
Output clamp  
Operating voltage  
On-state resistance  
Load current (ISO)  
Reversave  
Reverse battery protection by self turn on of  
power MOSFET  
Vbb(AZ)  
VON(CL)  
70  
V
V
V
62  
5.0...58  
Features  
V
bb(on)  
Overload protection  
Current limitation  
Short circuit protection  
Over temperature protection  
Over voltage protection (including load dump)  
Clamp of negative voltage at output  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
Diagnostic feedback with load current sense  
Open load detection via current sense  
R
ON  
9
44  
mΩ  
A
I
L(ISO)  
L(SC)  
Short circuit current limitation I  
Current sense ratio  
90  
13 000  
A
I : I  
L
IS  
1
)
TO 220-7SMD  
2
Loss of Vbb protection )  
Electrostatic discharge (ESD) protection  
7
7
Application  
Power switch with current sense diagnostic  
1
1
SMD  
Standard  
feedback for up to 48V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and  
inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.  
4 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Gate  
protection  
Overvoltage  
protection  
1,2,6,7  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
3
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
5
VIN  
R
VIS  
IS  
Logic GND  
1
2
)
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 9).  
Infineon Technologies AG  
Page 1  
2003-Oct-01  

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