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BTS650P

更新时间: 2024-02-19 12:14:18
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关过载保护局域网
页数 文件大小 规格书
16页 191K
描述
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

BTS650P 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.34
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL输入特性:STANDARD
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PZFM-T7
功能数量:1端子数量:7
输出特性:OPEN-SOURCE输出电流流向:SOURCE
标称输出峰值电流:240 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子位置:ZIG-ZAG
断开时间:180 µs接通时间:320 µs
Base Number Matches:1

BTS650P 数据手册

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®
PROFET BTS650P  
Smart Highside High Current Power Switch  
Features  
Product Summary  
Overvoltage protection Vbb(AZ)  
Overload protection  
62  
V
V
V
Current limitation  
Short circuit protection  
VON(CL)  
Output clamp  
42  
5.0...34  
V
Operating voltage  
On-state resistance  
bb(on)  
Overtemperature protection  
Overvoltage protection (including load dump)  
Clamp of negative voltage at output  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
Reverse battery protection  
Diagnostic feedback with load current sense  
Open load detection via current sense  
Loss of Vbb protection )  
R
6.0  
ON  
mΩ  
A
Load current (ISO)  
I
70  
130  
L(ISO)  
L(SC)  
1
)
Short circuit current limitation I  
Current sense ratio  
A
I : I  
14 000  
L
IS  
2
TO-220AB/7  
Electrostatic discharge (ESD) protection  
Application  
Power switch with current sense diagnostic  
feedback for 12V and 24V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and  
inductive loads  
7
7
1
1
Replaces electromechanical relays, fuses and  
discrete circuits  
SMD  
Standard  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
4 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Gate  
Overvoltage  
protection  
protection  
1,2,6,7  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
3
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
5
VIN  
R
VIS  
IS  
Logic GND  
1
2
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 9).  
)
Semiconductor Group  
Page 1 of 16  
1998-Nov.-2  

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