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BTS6143DAUMA1 PDF预览

BTS6143DAUMA1

更新时间: 2024-01-09 06:23:02
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关PC
页数 文件大小 规格书
18页 680K
描述
Smart Highside Power Switch

BTS6143DAUMA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-252
包装说明:TO-252,针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.57
Samacsys Confidence:4Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=881763PCB Footprint:https://componentsearchengine.com/footprint.php?partID=881763
Samacsys PartID:881763Samacsys Image:https://componentsearchengine.com/Images/9/BTS6143DAUMA1.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/BTS6143DAUMA1.jpgSamacsys Pin Count:5
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:PG-TO252-5-11_FFWSamacsys Released Date:2019-04-16 21:48:38
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G4
JESD-609代码:e3长度:6.5 mm
湿度敏感等级:3功能数量:1
端子数量:4输出电流流向:SINK
标称输出峰值电流:8 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-252封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:2.5 mm
最大供电电压:38 V最小供电电压:5.5 V
标称供电电压:12 V表面贴装:YES
技术:MOS端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.14 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:500 µs接通时间:500 µs
宽度:6.22 mmBase Number Matches:1

BTS6143DAUMA1 数据手册

 浏览型号BTS6143DAUMA1的Datasheet PDF文件第2页浏览型号BTS6143DAUMA1的Datasheet PDF文件第3页浏览型号BTS6143DAUMA1的Datasheet PDF文件第4页浏览型号BTS6143DAUMA1的Datasheet PDF文件第5页浏览型号BTS6143DAUMA1的Datasheet PDF文件第6页浏览型号BTS6143DAUMA1的Datasheet PDF文件第7页 
®
PROFET BTS 6143 D  
Smart Highside Power Switch  
Reversave  
Product Summary  
Operating voltage  
On-state resistance  
Nominal current  
Load current (ISO)  
Current limitation  
Reverse battery protection by self turn on of  
power MOSFET  
V
5.5...38  
V
bb(on)  
R
10  
8
33  
75  
mΩ  
A
A
ON  
Features  
I
I
I
L(nom)  
L(ISO)  
Short circuit protection with latch  
Current limitation  
Overload protection  
Thermal shutdown with restart  
Overvoltage protection (including load dump)  
Loss of ground protection  
L12(SC)  
A
Package  
PG-TO252-5-11  
(DPAK 5 pin; less than half the size as TO 220 SMD)  
Loss of V protection (with external diode for  
bb  
charged inductive loads)  
Very low standby current  
Fast demagnetisation of inductive loads  
Electrostatic discharge (ESD) protection  
Optimized static electromagnetic compatibility  
(EMC)  
Green Product (RoHS compliant)  
AEC qualified  
Diagnostic Function  
Proportional load current sense (with defined fault signal in case of overload operation, overtemperature  
shutdown and/or short circuit shutdown)  
Application  
Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads  
All types of resistive, inductive and capacitive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.  
3 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Gate  
protection  
Overvoltage  
protection  
1, 5  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
I
L
Current  
Sense  
Output  
Voltage  
detection  
2
Load  
IN  
Logic  
ESD  
I
IN  
Temperature  
sensor  
I
IS  
PROFET  
IS  
Load GND  
4
V
IN  
R
V
IS  
IS  
Logic GND  
Data Sheet  
1 of 18  
Rev. 1.0, 2007-02  

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