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BTS611L1E3128A

更新时间: 2024-01-19 20:53:27
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
14页 195K
描述
Smart Two Channel Highside Power Switch

BTS611L1E3128A 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.33
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE输入特性:SCHMITT TRIGGER
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G6
功能数量:1端子数量:6
输出特性:OPEN-SOURCE输出电流流向:SOURCE
标称输出峰值电流:9.5 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大压摆率:6 mA最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子位置:SINGLE
断开时间:400 µs接通时间:400 µs
Base Number Matches:1

BTS611L1E3128A 数据手册

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®
PROFET BTS 611 L1  
Smart Two Channel Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection Vbb(AZ)  
43  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
V
5.0 ... 34 V  
both  
parallel  
Operating voltage  
bb(on)  
channels: each  
On-state resistance RON  
Load current (ISO) IL(ISO)  
Current limitation  
200  
2.3  
4
100  
4.4  
4
m  
A
1
)
IL(SCr)  
A
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
TO-220AB/7  
Loss of ground and loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
7
7
7
Application  
1
1
1
Straight leads  
µC compatible power switch with diagnostic  
SMD  
Standard  
feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve  
loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection  
functions.  
+ V  
bb  
4
Curre nt  
lim it 1  
G a te 1  
p ro te c tio n  
Vo lta g e  
so urc e  
Ove rvo lta g e  
p ro te c tio n  
V
Logic  
OUT1  
Lim it fo r  
unc la m p e d  
ind . lo a d s 1  
Le ve l shifte r  
Re c tifie r 1  
Volta g e  
se nso r  
1
Te m p e ra ture  
se nso r 1  
3
6
IN1  
IN2  
Cha rg e  
p um p 1  
Op e n lo a d  
Sho rt to Vb b  
d e te c tio n 1  
Log ic  
ESD  
Cha rg e  
p um p 2  
5
G a te 2  
p ro te c tio n  
ST  
Curre nt  
lim it 2  
OUT2  
Le ve l shifte r  
Re c tifie r 2  
Lim it fo r  
unc la m p e d  
ind . lo a d s 2  
7
Load  
Te m p e ra ture  
se nso r 2  
Op e n lo a d  
Sho rt to Vb b  
d e te c tio n 2  
R
R
O1  
O2  
GND  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1
12.96  

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