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BTS555E3146

更新时间: 2024-02-12 16:05:03
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
16页 302K
描述
Smart Highside High Current Power Switch

BTS555E3146 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.29
Is Samacsys:N内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T5
功能数量:1端子数量:5
输出电流流向:SOURCE标称输出峰值电流:400 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子位置:SINGLE断开时间:240 µs
接通时间:600 µsBase Number Matches:1

BTS555E3146 数据手册

 浏览型号BTS555E3146的Datasheet PDF文件第2页浏览型号BTS555E3146的Datasheet PDF文件第3页浏览型号BTS555E3146的Datasheet PDF文件第4页浏览型号BTS555E3146的Datasheet PDF文件第5页浏览型号BTS555E3146的Datasheet PDF文件第6页浏览型号BTS555E3146的Datasheet PDF文件第7页 
®
PROFET Data Sheet BTS555  
Smart Highside High Current Power Switch  
Reversave  
Product Summary  
Overvoltage protection  
Output clamp  
Reversave  
Reverse battery protection by self turn on of  
power MOSFET  
Vbb(AZ)  
VON(CL)  
62  
44  
5.0...34  
V
V
V
Features  
V
Operating voltage  
bb(on)  
Overload protection  
Current limitation  
Short circuit protection  
Overtemperature protection  
Overvoltage protection (including load dump)  
Clamp of negative voltage at output  
1)  
On-state resistance  
Load current (ISO)  
Short circuit current limitation I  
R
2.5  
165  
mΩ  
A
ON  
I
L(ISO)  
L(SCp)  
520  
30 000  
A
Current sense ratio  
I : I  
L
IS  
2)  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
Diagnostic feedback with load current sense  
Open load detection via current sense  
TO-218AB/5  
TO-218AB-5-1  
3)  
Loss of V protection  
bb  
5
Electrostatic discharge (ESD) protection  
1
Application  
Straight leads  
Staggered leads  
Power switch with current sense diagnostic  
feedback for 12V and 24V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.  
3 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Overvoltage  
protection  
Gate  
protection  
1, 5  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
2
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
4
VIN  
R
VIS  
IS  
Logic GND  
)
)
1
Due to the different lead frame geometry Ron @25°C is 0.3 mhigher in staggered than in straight version,  
and accordingly for other temperatures.  
2
With additional external diode.  
3)  
Additional external diode required for energized inductive loads (see page 9).  
Infineon Technologies AG  
1 of 16  
2003-Oct-01  

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