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BTS542D2 PDF预览

BTS542D2

更新时间: 2024-02-26 02:56:45
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口开关电源开关过载保护
页数 文件大小 规格书
13页 281K
描述
Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

BTS542D2 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.91
Is Samacsys:NJESD-30 代码:R-PZIP-T5
JESD-609代码:e0端子数量:5
封装主体材料:PLASTIC/EPOXY封装代码:ZIP
封装等效代码:ZIP5,.15,.2,100TB封装形状:RECTANGULAR
封装形式:IN-LINE电源:4.5/42 V
认证状态:Not Qualified子类别:MOSFET Drivers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:ZIG-ZAGBase Number Matches:1

BTS542D2 数据手册

 浏览型号BTS542D2的Datasheet PDF文件第2页浏览型号BTS542D2的Datasheet PDF文件第3页浏览型号BTS542D2的Datasheet PDF文件第4页浏览型号BTS542D2的Datasheet PDF文件第5页浏览型号BTS542D2的Datasheet PDF文件第6页浏览型号BTS542D2的Datasheet PDF文件第7页 
®
PROFET BTS 542 D2  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection  
Vbb(AZ)  
63  
V
Current limitation  
V
R
4.5 ... 42 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
Short-circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection1  
18  
21  
70  
m
ON  
I
I
A
A
L(ISO)  
L(SCr)  
)
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
CMOS diagnostic output  
TO-218AB/5  
Open load detection in ON-state  
CMOS compatible input  
Loss of ground and loss of Vbb protection2)  
Electrostatic discharge (ESD) protection  
Application  
C compatible power switch with diagnostic  
feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
3
Vo lta g e  
so urc e  
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
Lim it fo r  
unc la m p e d  
ind . lo a d s  
Cha rg e p um p  
Le ve l shifte r  
Vo lta g e  
se nso r  
5
Te m p e ra ture  
se nso r  
Re c tifie r  
2
4
Op e n lo a d  
d e te c tio n  
Lo g ic  
ESD  
Sho rt c irc uit  
d e te c tio n  
PROFET  
1
1)  
2)  
No external components required, reverse load current limited by connected load.  
Additional external diode required for charged inductive loads  
Semiconductor Group  
Page 1 of 13  
13.Nov.95  

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