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BTS432E2E3043 PDF预览

BTS432E2E3043

更新时间: 2024-01-05 21:12:23
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
14页 284K
描述
Smart Highside Power Switch

BTS432E2E3043 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:STRAIGHT, TO-220AB, 5 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.25
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSFM-T5功能数量:1
端子数量:5输出电流流向:SOURCE
标称输出峰值电流:44 A封装主体材料:PLASTIC/EPOXY
封装等效代码:SIP5,.1,67TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT电源:4.5/42 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:42 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:NO
技术:MOS端子形式:THROUGH-HOLE
端子节距:1.7 mm端子位置:SINGLE
断开时间:80 µs接通时间:300 µs
Base Number Matches:1

BTS432E2E3043 数据手册

 浏览型号BTS432E2E3043的Datasheet PDF文件第2页浏览型号BTS432E2E3043的Datasheet PDF文件第3页浏览型号BTS432E2E3043的Datasheet PDF文件第4页浏览型号BTS432E2E3043的Datasheet PDF文件第5页浏览型号BTS432E2E3043的Datasheet PDF文件第6页浏览型号BTS432E2E3043的Datasheet PDF文件第7页 
®
PROFET BTS 432 E2  
Smart Highside Power Switch  
Product Summary  
Features  
V
80  
58  
V
V
1
Load dump  
)
Load dump and reverse battery protection  
Clamp of negative voltage at output  
Short-circuit protection  
Current limitation  
Thermal shutdown  
Diagnostic feedback  
Open load detection in ON-state  
CMOS compatible input  
V -VOUT Avalanche Clamp  
bb  
V
V
4.5 ... 42  
-32  
V
V
bb (operation)  
bb (reverse)  
R
ON  
38  
mΩ  
I
I
I
44  
A
L(SCp)  
L(SCr)  
L(ISO)  
35  
A
11  
A
Electrostatic discharge (ESD) protection  
2)  
Loss of ground and loss of V protection  
Overvoltage protection  
Undervoltage and overvoltage shutdown with auto-  
restart and hysteresis  
bb  
5
5
5
1
Application  
1
SMD  
Straight leads  
Standard  
µC compatible power switch with diagnostic feedback  
for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.  
+ V  
R
bb  
bb  
3
5
Voltage  
source  
Gate  
protection  
Overvoltage  
protection  
Current  
limit  
VLogic  
OUT  
Limit for  
Charge pump  
Level shifter  
Voltage  
sensor  
unclamped  
ind. loads  
Temperature  
sensor  
Rectifier  
IN  
2
4
Open load  
detection  
Load  
Logic  
ESD  
ST  
Short circuit  
detection  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
2)  
No external components required, reverse load current limited by connected load.  
Additional external diode required for charged inductive loads  
Semiconductor Group  
1 of 14  
2003-Oct-01  

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